Semiconductor substrate with multiple crystallographic orientations

Abstract

A pair of semiconductor structures and a method for fabricating a semiconductor structure each utilize a semiconductor substrate having a first crystallographic orientation, and a dielectric layer located thereupon. The method provides for epitaxially growing a semiconductor layer on the semiconductor substrate to encapsulate the dielectric layer. The method also provides for patterning the semiconductor layer to yield a semiconductor structure that comprises a bulk semiconductor structure and a semiconductor-on-insulator structure, or alternatively a patterned semiconductor layer that straddles the dielectric layer and contacts the semiconductor substrate.

Dependencies are inferred from the claim text.