Method of forming non-volatile resistance variable devices

A variable resistance memory cell, comprising:

• a first electrode;
• a chalcogenide-based material over the first electrode, said chalcogenide-based material being doped with metal ions;
• a passivating material covering at least a portion of a surface of the chalcogenide-based material;
• and
• a second electrode over the passivating material, wherein there are no voids in an interface between the second electrode, passivating material, and chalcogenide-based material.

A method of forming a memory device, comprising:

• forming a electrode;
• forming a second electrode;
• and
• forming a variable resistance memory element between the first and second electrodes, wherein a substantially void-free interface is formed between the variable resistance memory element and one of the first and second electrodes by forming a passivating material as part of the variable resistance memory element.

A method of forming a variable resistance memory cell, comprising:

• forming a first electrode;
• forming a chalcogenide-based material over the first electrode;
• forming a passivating material over the chalcogenide-based material;
• and
• forming a second electrode over the passivating material, wherein there are substantially no voids between the second electrode, passivating material, and chalcogenide-based material.