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US 2008/0185571 A1Published application
Resistive memory including buried word lines
AssigneeQimonda North America Corp.
InventorsThomas Happ, Jan Boris Philipp
Life of this patent
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Abstract
An integrated circuit including a memory cell includes a vertical bipolar select device including a base and an emitter. The memory cell includes a resistive memory element coupled to the emitter and a buried metallized word line contacting the base.
Claims38
An integrated circuit including a memory cell comprising:
- a vertical bipolar select device including a base and an emitter;
- a resistive memory element coupled to the emitter;
- and
- a buried metallized word line contacting the base.
1 more element
A memory comprising:
- a first vertical bipolar select device including a first base and a first emitter;
- a first phase change element coupled to the first emitter;
- a second vertical bipolar select device including a second base and a second emitter;
- a second phase change element coupled to the second emitter;
- and
- a buried word line contacting the first base and the second base.
3 more elements
A method for fabricating a memory cell, the method comprising:
- forming a vertical bipolar select device including a base and an emitter;
- forming a buried metallized word line contacting the base of the vertical bipolar select device, and
- forming a resistive memory element coupled to the emitter.
A method for fabricating a memory cell, the method comprising:
- forming a collector region, a base region, and an emitter portion for a vertical bipolar select device on a substrate;
- isolating the collector region and a first portion of the base region with isolation material;
- depositing metal over exposed portions of the emitter portion and the base region;
- recess etching the metal to expose a second portion of the base region and sidewalls of the emitter portion;
- annealing the metal to form salicide contacting sidewalls of the base region and a top of the emitter portion;
- selectively etching the metal not forming salicide to form salicide word lines and a salicide layer on top of the emitter portion;
- etching the salicide layer on top of the emitter portion to form a salicide contact;
- etching the emitter portion to form an emitter region;
- and
- fabricating a phase change memory element coupled to the salicide contact.
7 more elements
A method for fabricating a memory cell, the method comprising:
- forming a collector region, a base region, and an emitter portion for a vertical bipolar select device on a substrate;
- protecting a top of the emitter portion with a protection material layer;
- isolating the collector region and a first portion of the base region with isolation material;
- depositing metal over exposed portions of the protection material layer, the emitter portion, and the base region;
- recess etching the metal to expose a second portion of the base region and sidewalls of the emitter portion;
- annealing the metal to form salicide contacting sidewalls of the base region;
- selectively etching the metal not forming salicide to form salicide word lines;
- etching the emitter portion to form an emitter region;
- and
- fabricating a phase change memory element coupled to the emitter region.
7 more elements
A method for fabricating a memory cell, the method comprising:
- providing a substrate;
- epitaxially growing a collector layer and a first base layer;
- depositing a protection material layer over the first base layer;
- etching trenches into the protection material layer and the first base layer to provide a first base portion and an etched protection material layer;
- conformally depositing a metal layer over exposed portions of the etched protection material layer and the first base portion;
- etching the metal layer to form spacers contacting the first base portion, the spacers forming a word line;
- etching the first base portion and the collector layer to form a collector region and a first base region;
- depositing isolation material around the collector, the first base region, and the word line;
- removing the etched protection material layer;
- epitaxially growing a second base region on the first base region;
- epitaxially growing an emitter portion on the second base region;
- etching the emitter portion to form an emitter region;
- and
- fabricating a phase change element coupled to the emitter region.
11 more elements
Dependencies are inferred from the claim text.