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US 2008/0185569 A1Published application
Phase change random access memories including a word line formed of a metal material and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMyung-jin Park, Young-tae Kim, Keun-ho Lee
Life of this patent
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Abstract
A phase change memory includes a word line disposed on a semiconductor substrate and a cell diode that physically contacts the semiconductor substrate and a corresponding word line. The word line may be formed of a metal, such as tungsten. Accordingly, no metal contact is included and the word line formed of metal is in contact with the cell diode.
Claims20
A phase change memory, comprising:
- a word line disposed on a semiconductor substrate;
- and
- a cell diode that physically contacts the semiconductor substrate and a corresponding word line.
A method of manufacturing a phase change memory, comprising:
- forming a word line on a semiconductor substrate;
- and
- forming a cell diode that physically contacts the semiconductor substrate and the word line.
Dependencies are inferred from the claim text.