Infrared sensors and methods for manufacturing the infrared sensors

An infrared sensor, comprising:

• a silicon substrate;
• an electrically insulative layer disposed on the silicon substrate;
• a silicon nitride layer disposed proximate to the electrically insulative layer such that a cavity is formed therebetween;
• a titanium layer disposed on a side of the silicon nitride layer opposite the electrically insulative layer;
• and
• an infrared sensing structure disposed on the titanium layer configured to generate a signal indicative of an amount of infrared energy being received by the infrared sensing structure, the cavity configured to capture a portion of the infrared energy that is received by the infrared sensing structure.

A method for manufacturing an infrared sensor, comprising:

• depositing an electrically insulative layer on a silicon substrate;
• depositing a germanium layer proximate to the electrically insulative layer;
• depositing a titanium layer on the germanium layer;
• disposing an infrared sensing structure on the titanium layer;
• and
• removing the germanium layer by applying a liquid on the germanium layer that dissolves the germanium layer such that a cavity is formed between the electrically insulative layer and the titanium layer, the cavity configured to capture a portion of infrared energy therein that is received by the infrared sensing structure.

An infrared sensor, comprising:

• a silicon substrate;
• an electrically insulative layer disposed on the silicon substrate;
• a titanium layer disposed proximate to the electrically insulative layer such that a cavity is formed therebetween;
• and
• an infrared sensing structure disposed on the titanium layer configured to generate a signal indicative of an amount of infrared energy being received by the infrared sensing structure, the cavity capturing a portion of the infrared energy received by the infrared sensing structure therein.

The infrared sensor of claim 18, wherein the infrared sensing structure comprises:

• a first platinum layer disposed on the titanium layer;
• a ferroelectric layer disposed on the first platinum layer;
• and
• a second platinum layer disposed on the ferroelectric layer.

A method for manufacturing an infrared sensor, comprising:

• depositing a germanium layer on a silicon substrate;
• depositing a first electrically conductive layer on both the germanium layer and a portion of the silicon substrate;
• depositing a ferroelectric layer on the first electrically conductive layer opposite the germanium layer;
• depositing a second electrically conductive layer on both the ferroelectric layer and a portion of the silicon substrate;
• and
• removing the germanium layer by applying a liquid on the germanium layer that dissolves the germanium layer such that a cavity is formed between the first electrically conductive layer and the silicon substrate, the cavity configured to capture a portion of infrared energy therein that is received by the first electrically conductive layer, the ferroelectric layer, and the second electrically conductive layer.

An infrared sensor, comprising:

• a silicon substrate;
• a first electrically conductive layer disposed on a portion of the silicon substrate such that a cavity is formed between a portion of the first electrically conductive layer and the silicon substrate;
• a ferroelectric layer disposed on the first electrically conductive layer opposite the cavity;
• and
• a second electrically conductive layer disposed on both the ferroelectric layer and another portion of the silicon substrate;
• the first electrically conductive layer, the ferroelectric layer, and the second electrically conductive layer being configured to generate a signal indicative of an amount of infrared energy being received by the first electrically conductive layer, the ferroelectric layer, and the second electrically conductive layer;
• the cavity being configured to capture a portion of the infrared energy received by the first electrically conductive layer, the ferroelectric layer and the second electrically conductive layer.