Loading patent…
AssigneeFujitsu Limited
InventorsAtsushi Furuya, Akihiko Fujisaki, Tetsuyuki Kubota
Estimating the term…
A static magnetic field structure data is read, a cross section which is parallel with the target surface and in which plasma is generated is specified at an arbitrary position, and an erosion center line segment having an endless shape which goes through the center of a region in which the magnetic field vertical to the plane of the specified cross section is zero is calculated. The static erosion rate distribution in the specified cross section of the magnetic field structure data is calculated based on the erosion rate of the erosion center line segment, the rotational erosion rate distribution caused along with rotation of the magnet is calculated, and the film formation rate distribution on the objective material is calculated by using the rotational erosion rate distribution.
A design supporting method of magnetron sputtering apparatus which forms a magnetic field in a surface side of a target, which is a film formation material, by a rotating magnet disposed in a back surface side of the target so as to confine plasma and causes ion atoms generated from the plasma to collide with the target at a high speed so as to carry out sputtering and form a thin film on an objective material such as a wafer, the design supporting method of magnetron sputtering includes:
A design supporting system of magnetron sputtering apparatus which forms a magnetic field in a surface side of a target, which is a film formation material, by a rotating magnet disposed in a back surface side of the target so as to confine plasma and causes ion atoms generated from the plasma to collide with the target at a high speed so as to carry out sputtering and form a thin film on an objective material such as a wafer, the design supporting system of magnetron sputtering apparatus having:
A computer-readable storage medium which stores a program which causes a computer of a design supporting system of magnetron sputtering apparatus which forms a magnetic field in a surface side of a target, which is a film formation material, by a magnet, which is disposed in a back surface side of the target and rotates at a constant speed, so as to confine plasma and causes ion atoms generated from the plasma to collide with the target at a high speed so as to carry out sputtering and form a thin film on an objective material such as a wafer, to execute:
A simulation method of magnetron sputtering apparatus which forms a magnetic field in a surface side of a target, which is a film formation material, by a rotating magnet disposed in a back surface side of the target so as to confine plasma and causes ion atoms generated from the plasma to collide with the target at a high speed so as to carry out sputtering and form a thin film on an objective material such as a wafer, the simulation method of magnetron sputtering apparatus including:
A simulation system of magnetron sputtering which forms a magnetic field in a surface side of a target, which is a film formation material, by a rotating magnet disposed in a back surface side of the target so as to confine plasma and causes ion atoms generated from the plasma to collide with the target at a high speed so as to carry out sputtering and form a thin film on an objective material such as a wafer, the simulation system of magnetron sputtering having:
Dependencies are inferred from the claim text.