Passivation Layer for a Circuit Device and Method of Manufacture

A method for manufacturing an integrated circuit comprising:

• providing a substrate having a substrate surface;
• forming an electrical component comprising at least a transistor or a capacitor on the substrate surface;
• coating the substrate surface and electrical component with a first protective dielectric layer made of alumina, the first protective dielectric layer having a thickness that is in the range of approximately 50 to 2000 angstroms;
• etching a portion of the first protective dielectric layer from the substrate surface or the electrical component in order to form a contact surface;
• forming an air bridge on the contact surface;
• coating the first protective dielectric layer, the electrical component, and the air bridge with a second protective dielectric layer made of alumina, the second protective dielectric layer having a thickness that is in the range of approximately 50 to 2000 angstroms;
• applying an adhesion promoter to the second protective dielectric layer;
• and
• coating the second protective dielectric layer with a third dielectric layer made of alumina, silica, parylene F, aromatic-fluorinated VT-4, and parylene HT®, the third dielectric layer having a thickness that is in the range of approximately 100 to 1000 angstroms.