Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices

A method of fabricating a thermoelectric device, the method comprising:

• patterning a substrate to define a growth surface having a plurality of mesas protruding therefrom;
• and then
• epitaxially growing a thermoelectric film on the growth surface.

A thermoelectric device, comprising:

• a thermoelectric element comprising a thermoelectric film having a crystallographic orientation that is tilted at an angle in a range of about 5 degrees to about 30 degrees relative to a surface of the thermoelectric film.

A thermoelectric film, comprising:

• a thermoelectric material layer having a thickness of less than about 100 micrometers (μm) and a crack density of less than about 1 crack per millimeter (mm).