Plasma reactor for the treatment of large size substrates

A capacitively coupled radiofrequency plasma reactor, comprising:

• at least one first electrode having a concave surface;
• at least one second electrode spaced at a distance from the first electrode;
• an internal process area extending between the first and second electrodes;
• a gas inlet for providing the process area with a process gas;
• at least one radiofrequency generator for frequencies greater than 13.56 MHz connected to at least one of the electrodes, at a connection location, for generating a plasma discharge in the process area;
• and
• a gas outlet for evacuating process gas from the reactor;
• a planar dielectric plate arranged over the side of the first electrode with the concave surface, the dielectric plate having a substrate surface facing away from the concave surface of the first electrode;
• a gaseous dielectric layer defined by the dielectric plate and the convex surface of the first electrode;
• wherein the substrate supporting surface is configured to receive at least one substrate with a largest dimension of at least 0.7 m, defining one boundary of the process area, to be exposed to the processing action of the plasma discharge;
• wherein the dielectric plate and the gaseous dielectric layer are arranged electrically in series with the substrate and the plasma discharge to form a dielectric structure having capacitance per unit surface values which are not uniform along at least one direction of the working surface of the substrate, for generating a given distribution profile, for compensating a process in a non-uniform manner along the working surface.

A capacitively coupled radiofrequency plasma reactor, comprising:

• at least one first electrode having a planar surface and a plurality of substrate supporting posts extending upward from the planar surface;
• a second electrode spaced at a distance from the first electrode;
• an internal process area extending between the first and second electrodes;
• a gas inlet for providing the process area with a process gas;
• at least one radiofrequency generator for frequencies greater than 13.56 MHz connected to at least one of the electrodes, at a connection location, for generating a plasma discharge in the process area;
• and
• a gas outlet for evacuating process gas from the reactor;
• wherein the ends of the posts collectively define a curved substrate supporting surface for at least one substrate with a largest dimension of at least 0.7 m, defining one boundary of the process area, to be exposed to the processing action of the plasma discharge;
• wherein the planar surface of the first electrode and the side of the substrate facing the planar surface define a gaseous dielectric layer;
• and
• wherein the gaseous dielectric layer is arranged electrically in series with the substrate and plasma discharge, the gaseous dielectric layer having capacitance per unit surface values which are not uniform along at least one direction of the working surface of the substrate, for generating a given distribution profile, for compensating a process in a non-uniform manner along the working surface.