Pattern correction apparatus, pattern correction program, pattern correction method and fabrication method for semiconductor device

A pattern correction program for performing both of optical proximity effect correction and process proximity effect correction with regard to a design pattern, said pattern correction program causing:

• a computer to function as correction calculation means configured to perform correction calculation by two-dimensional model-based optical proximity effect correction for each of sampling points set on pattern edges which form the design pattern;
• said correction calculation means performing the correction calculation which involves weighting with a two-dimensional distribution of the pattern edges around the sampling point taken into consideration;
• said weighting being performed such that a high weight is applied to a region in which reaction products which can have an influence on the sampling point are produced but a low weight is applied to any other region.

A pattern correction method for performing both of optical proximity effect correction and process proximity effect correction with regard to a design pattern, comprising the steps of:

• performing a correction calculation by two-dimensional model-based optical proximity effect correction for each of sampling points set on pattern edges which form the design pattern;
• performing said correction calculation while involving weighting with a two-dimensional distribution of the pattern edges around the sampling point taken into consideration;
• performing said weighting such that a high weight is applied to a region in which reaction products which can have an influence on the sampling point are produced but a low weight is applied to any other region.