Method for correcting photomask pattern
AssigneeUnited Microelectronics Corp.
InventorsLing-Chieh Lin, Chuen-Huei Yang, Chien-Fu Lee, I-Hsiung Huang
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Abstract
A method for correcting a photomask pattern is disclosed. The correction method determines a layout condition according to the space and line width of a layout pattern. The layout condition is used to determine the type of optical proximity correction to be used for a layout pattern in order to generate a correction pattern, and the correction pattern is compared with a predetermined specification. Furthermore, a modified-rule optical proximity correction table is employed to correct the special layout pattern. Therefore, the fidelity correction may be easily implemented.
Claims16
A method for correcting a photomask pattern, comprising:
- receiving a layout file corresponding to a layout pattern;
- selecting a first optical proximity correction (OPC) or a second OPC according to a layout condition of the layout pattern to correct the layout pattern;
- generating a first correction pattern when the first OPC is selected to correct the layout pattern;
- and
- comparing the first correction pattern with an predetermined specification, wherein when the first correction pattern does not conform to the predetermined specification, the second OPC is used to correct the layout pattern to generate a second correction pattern.
A method for correcting a photomask pattern, comprising:
- receiving a layout file corresponding to a layout pattern;
- using a model-based OPC to correct the layout pattern and generate a first correction pattern according to a layout condition of the layout pattern;
- and
- comparing the first correction pattern with a predetermined specification, wherein if the first correction pattern does not conform to the predetermined specification, a rule-based OPC is used to generate a second correction pattern.
A method for correcting a photomask pattern, comprising:
- receiving a layout file corresponding to a layout pattern;
- using a rule-based OPC to correct the layout pattern and generate a second correction pattern according to the layout condition of the layout pattern;
- and
- comparing the second correction pattern with a predetermined specification when the second correction pattern does not conform to the predetermined specification, and using a model-based OPC to correct the layout pattern to generate a first correction pattern.
Dependencies are inferred from the claim text.