Wafer support pin for preventing slip dislocation during annealing of water and wafer annealing method using the same
AssigneeSiltron Inc.
InventorsKun Kim, Jin-Kyun Hong, Woo-Hyun Seo, Kyoung-Hwan Song
Life of this patent
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Abstract
A wafer support pin has a front end contacted with a wafer such that the front end is flat or rounded. Thus, gravitational stress is minimized during annealing the wafer, thereby minimizing slip dislocation. This wafer support pin is suitably used for annealing of a wafer, particularly high temperature rapid thermal annealing of a large-diameter wafer.
Claims19
A wafer support pin for supporting a wafer during annealing of the wafer from a bottom,
- wherein a front end of the wafer support pin, contacted with the wafer, is flat or rounded.
A wafer support pin for supporting a wafer by point contact from a bottom thereof during annealing the wafer,
- wherein, after annealing the wafer using the wafer support pin, a pin mark formed on a contact portion between the wafer and the wafer support pin has a sectional area of 1.0×10−3 to 2.0×10−2 cm2, when being measured after Wright etching is conducted for 5 minutes to the contact portion between the wafer and the wafer support pin.
A wafer annealing method for annealing a wafer while supporting the wafer by point contact from a bottom thereof using wafer support pins,
- wherein an annealing temperature is in the range of 1,150 to 1,250° C., the wafer has a radius of 145 mm or more, and the wafer has a mass of 100 g or more.
A wafer annealing method for annealing a wafer while supporting the wafer by point contact from a bottom thereof using wafer support pins,
- wherein, after annealing, a pin mark formed on a contact portion between the wafer and the wafer support pin has a sectional area of 1.0×10−3 to 2.0×10−2 cm2, when being measured after Wright etching is conducted for 5 minutes to the contact portion between the wafer and the wafer support pin.
A rapid thermal annealing method for a wafer at a high temperature of 1,120° C. or above while supporting the wafer by point contact from a bottom thereof using wafer support pins,
- wherein the wafer support pin has a front end to contact with the wafer such that the front end of the wafer support pin is flat or rounded, and
- wherein, in a step for increasing temperature to a highest target temperature, a step for intermediate stabilization at a lower temperature than the highest target temperature is included.
A rapid thermal annealing method for a wafer, which conducts rapid thermal annealing to the wafer at a first temperature, then increasing the temperature, and conducting rapid thermal annealing to the wafer at a second temperature while supporting the wafer by point contact from a bottom thereof using wafer support pins,
- wherein the wafer support pin has a front end to contact with the wafer such that the front end of the wafer support pin is flat or rounded, and
- wherein, in a step for increasing temperature from the first temperature to the second temperature, a step for intermediate stabilization at a temperature between the first and second temperatures is included.
Dependencies are inferred from the claim text.