Method of manufacturing semiconductor device
AssigneeNEC Electronics Corporation
InventorYutaka Nagakura
Life of this patent
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Abstract
A semiconductor device manufacturing method includes: a step of implementing etching onto a film formed on a semiconductor wafer; and a removal step of supplying, after etching, a removing solution for removing deposition on the film to a semiconductor wafer in the state where the number of rotations thereof is smaller than a predetermined number of rotations thereafter to rotate the semiconductor wafer at a higher number of rotations, which is greater than the predetermined number of rotations. In this method, the time during which removing solution is supplied is 45 sec. or less. This method includes a sequence in which removal step is executed twice or more.
Claims20
A method of manufacturing a semiconductor device comprising:
- forming a film on a semiconductor wafer;
- forming a mask film on the film;
- etching the film using the mask;
- and
- cleaning the wafer after etching the film, the cleaning step including a sequence supplying removing solution to the wafer while a removal step having plural operations including rotating the wafer at a first number of rotation and a rotating the wafer at a second number of rotation which is larger than the first number of rotation is performed,
- wherein the total time of supplying the removing solution in the cleaning step is 45 seconds or less.
A method of manufacturing a semiconductor device comprising:
- forming a film on a semiconductor wafer;
- forming a mask film on the film;
- etching the film using the mask;
- and
- cleaning the wafer to remove deposition, the cleaning step including a sequence supplying removing solution on the wafer while a removal step having plural operations including rotating the wafer at a first number of rotation and a rotating the wafer at a second number of rotation which is larger than the first number of rotation is performed,
- wherein the sequence further including a rinsing step rotating the wafer at a third number of rotation whose number is greater than the first number of rotations and smaller than the second number of rotations.
A method of manufacturing a semiconductor device, comprising:
- performing a selective etching operation on a semiconductor wafer to produce an intermediate semiconductor wafer;
- and
- performing a cleaning operation on the intermediate semiconductor wafer;
- the cleaning operation is performed by carrying out a sequence a plurality of times, the sequence comprising a removal step, a rinsing step and a drying step, the removal step including supply of a removing solution to the intermediate semiconductor wafer, the rinsing solution including supply of a rinsing solution to the intermediate semiconductor wafer, the removing solution being thereby supplied to the intermediate semiconductor wafer a plurality of times during the cleaning operation, and a total period of time when the removing solution is being supplied to the intermediate semiconductor wafer during the cleaning operation is 45 seconds or less.
Dependencies are inferred from the claim text.