Method for fabricating semiconductor device
AssigneeFujitsu Limited
InventorsKunihiko Nagase, Akihiro Hasegawa
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Abstract
The method for fabricating the semiconductor device comprises the step of forming an insulating film 14 having an opening 18; the step of forming an organic resist film 20a; the step of forming over the organic resist film 20a a mask film 20b having etching characteristics different from those of the organic resist film 20a; the step of forming an opening in the mask film 20b; and the step of etching the organic resist film 20a with the mask film 20b as the mask. In the step of etching the organic resist film, the organic resist film 20a is etched with a mixed gas of nitrogen gas and oxygen gas.
Claims9
A method for fabricating a semiconductor device comprising the steps of:
- forming an insulating film having a first opening in a first region;
- forming an organic resist film over the insulating film and in the first opening;
- forming a mask film having etching characteristics different from those of the organic resist film over the organic resist film;
- forming a second opening in the mask film in a second region including at least a part of the first region;
- and
- etching the organic resist film with the mask film as a mask,
- in the step of etching the organic resist film, the organic resist film being etched with a mixed gas of nitrogen gas and oxygen gas.
Dependencies are inferred from the claim text.