Method for manufacturing a semiconductor device

A method of manufacturing a semiconductor device comprising;

• a) forming a SiGe layer on a substrate;
• b) forming a Si layer on the SiGe layer;
• c) forming a groove that exposes the side surface of the SiGe layer by partly etching the Si layer and the SiGe layer;
• and
• d) forming a hollow portion between the substrate and the Si layer by etching the SiGe layer via the groove, wherein
• step d) further comprises e) etching the SiGe layer by intermittently supplying a new liquid including a fluorinated nitric acid solution from a nozzle to the substrate while rotating the substrate.

A method of manufacturing a semiconductor device, comprising;

• a) forming a SiGe layer on a substrate;
• b) forming a Si layer on the SiGe layer;
• c) forming a groove that exposes the side surface of the SiGe layer by partly etching the Si layer and the SiGe layer;
• and
• d) forming a hollow portion between the substrate and the Si layer by etching the SiGe layer via the groove, wherein
• step d) further comprises etching the SiGe layer by repeating dipping the substrate into a new liquid including a fluorinated nitric acid solution stored in an etching process chamber.