Surface roughening process
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsBernard Aspar, Chrystelle Lagahe Blanchard, Nicolas Sousbie
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Abstract
A process of forming a rough interface in a semiconductor substrate. The process includes the steps of depositing a material on a surface of the substrate, forming a zone of irregularities in the material, and forming a rough interface in the semiconductor substrate by a thermal oxidation of the material and a part of the substrate. Additionally, the surface of the oxidized material may be prepared and the surface may be assembled with a second substrate.
Claims21
A process of forming a rough interface in a semiconductor substrate, the process comprising:
- a) depositing material on a surface of the substrate to form a zone of irregularities;
- and
- b) forming a rough interface in the semiconductor substrate by thermally oxidizing the layer of material and a part of the substrate.
A process of forming a semiconductor component with a buried rough interface, the process comprising:
- a) depositing material on a surface of a first semiconductor substrate;
- b) forming a zone of irregularities on the material;
- c) forming a rough interface in the first semiconductor substrate by a thermal oxidation of the material and a part of the first semiconductor substrate;
- d) preparing the surface of the oxidized material;
- e) assembling the surface of the oxidized material with a second substrate.
Dependencies are inferred from the claim text.