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US 2008/0176370 A1Published application
Method for fabricating semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorsChoul Joo Ko, Yong Jun Lee
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Abstract
In a method for forming a semiconductor device, a device isolation layer is formed in a capacitor region of a silicon substrate, and a bottom electrode and a dielectric layer are formed on the device isolation layer. Insulation sidewalls are formed on both sides of the bottom electrode. A top electrode is formed on the dielectric layer, and simultaneously a gate electrode is formed in a transistor region of the silicon substrate. Source/drain impurity regions are formed in the silicon substrate at both sides of the gate electrode.
Claims20
A method for fabricating a semiconductor device comprising:
- forming a device isolation structures in a capacitor region of a silicon substrate;
- forming a bottom electrode and a dielectric layer on a first device isolation structure;
- forming insulation sidewalls on sides of the bottom electrode;
- simultaneously forming a top electrode on the dielectric layer and a gate electrode in a transistor region of the silicon substrate;
- and
- forming source/drain impurity regions in the silicon substrate at sides of the gate electrode.
3 more elements
Dependencies are inferred from the claim text.