Ebeam inspection for detecting gate dielectric punch through and/or incomplete silicidation or metallization events for transistors having metal gate electrodes

A method for detecting a gate dielectric punch through and/or incomplete silicidation or metallization event during semiconductor processing, comprising:

• processing a semiconductor workpiece through a gate electrode silicidation or metallization fabrication stage;
• directing an ebeam at a location of the workpiece whereon one or more transistors are formed;
• detecting emissions from the location resulting from the incident ebeam;
• using the detected emissions to determine a gray level value (GLV) for the location;
• identifying a gate dielectric punch through and/or incomplete silicidation or metallization event based upon the determined GLV after formation of the one or more transistors but before completion of processing of the workpiece;
• and
• adapting the processing of the workpiece based on the identification of a gate dielectric punch through and/or incomplete silicidation or metallization event.