Feature Dimension Control in a Manufacturing Process

A method of manufacturing a layer over a substrate, comprising:

• etching the layer over the substrate through a patterned resist layer that overlies the layer over the substrate by using a reactive ion etch process to define a pattern in the layer over the substrate;
• removing the resist layer;
• measuring a physical characteristic of the layer over the substrate;
• determining an etch control parameter based on the physical characteristic;
• and
• etching the layer over the substrate by using a chemical downstream etch process in accordance with the etch control parameter to remove a portion of the layer over the substrate.

A system for manufacturing a semiconductor wafer, comprising:

• means for etching a layer to define a pattern in the layer;
• and
• means for measuring a physical characteristic of the pattern;
• means for determining an etch control parameter based on the physical characteristic;
• and
• means for etching the layer in accordance with the etch control parameter.