Exposure mask and method of forming pattern
OwnerMasayoshi Saitoinventor
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Abstract
A method of forming a pattern according to the present invention comprising preparing a reduced projection exposure apparatus having a reduced projection ratio 1/m and a wavelength λ (nm) of exposing light and patterning a light shielding element pattern of a reticle mask on a resist film having a thickness tr (nm). The light shielding element pattern has a pattern opening portion having a minimum opening dimension D (nm). A thickness t0 of the light shielding element pattern is set so as to meet a relational equation of m*tr≦t0+5*D*D/λ. Preferably, the thickness t0 of the light shielding element pattern is set so as to meet a relational equation of m*tr≦t0+D*D/λ.
Claims21
A method of forming a pattern, the method comprising:
- preparing a reduced projection exposure apparatus having a reduced projection ratio 1/m and a wavelength λ (nm) of exposing light;
- and
- patterning a light shielding element pattern of a reticle mask on a resist film having a thickness tr (nm),
- wherein the light shielding element pattern has a pattern opening portion having a minimum opening dimension D (nm), and
- wherein a thickness t0 of the light shielding element pattern is set so as to meet a relational equation of m*tr≦t0+5*D*D/λ.
A reticle mask used in a reduced projection exposure apparatus having a reduced projection ratio 1/m and a wavelength λ (nm) of exposing light, and used for patterning on a resist film having a thickness tr (nm), the reticle mask comprising:
- a light shielding element pattern having a pattern opening portion with a minimum opening dimension D (nm),
- wherein a thickness t0 of the light shielding element pattern is set so as to meet a relational equation of m*tr≦t0+5*D*D/λ.
Dependencies are inferred from the claim text.