Semiconductor device and fabrication method thereof

A semiconductor device, comprising:

• a substrate having a first region and a second region;
• a dielectric layer disposed on the substrate;
• a hard mask layer disposed on the dielectric layer;
• and
• a first metal layer and a second metal layer embedded in the hard mask layer in the first and second regions, respectively;
• wherein the first and second metal layers are located at the same level and the first metal layer extends into the dielectric layer, such that the first metal layer is thicker than the second metal layer.

A method for fabricating a semiconductor device, comprising:

• providing a substrate having a first region and a second region;
• forming a dielectric layer on the substrate;
• etching the dielectric layer to form a first trench opening in the dielectric layer in the first region;
• etching the dielectric layer to form a via opening under the first trench opening and exposing the substrate and simultaneously form a second trench opening in the dielectric layer in the second region, wherein the first and second trench openings have different depths;
• and
• filling the first and second trench openings and the via opening with a metal material.

A method for fabricating a semiconductor device, comprising:

• providing a substrate having a first region and a second region;
• successively forming a dielectric layer and a hard mask layer on the substrate;
• forming a trench pattern in the hard mask layer in the first region to expose the dielectric layer thereunder;
• forming a via recess region in the dielectric layer under the trench pattern and simultaneously forming a trench recess region in the hard layer in the second region;
• forming a first trench opening and a via opening in the dielectric layer in the first region by etching the dielectric layer under the trench pattern and simultaneously forming a second trench opening in the second region by etching the trench recess region and the dielectric layer thereunder, wherein the first and second trench openings have different depths;
• removing the hard mask layer;
• and
• filling the first and second trench openings and the via opening with a metal material.

A method for fabricating a semiconductor device, comprising:

• providing a substrate having a first region and a second region;
• successively forming a dielectric layer, a first hard mask layer, and a second hard mask layer on the substrate;
• forming a trench pattern in the second hard mask layer in the first region to expose the first hard mask layer thereunder;
• forming a via pattern in the first hard mask layer under the trench pattern to expose the dielectric layer thereunder and simultaneously forming a trench recess region in the second hard layer in the second region;
• forming a first trench opening and a via opening in the dielectric layer in the first region by etching the first hard mask layer and the dielectric layer under the trench pattern and simultaneously forming a second trench opening in the second region by etching the trench recess region and the first hard mask layer and the dielectric layer thereunder, wherein the first and second trench openings have different depths;
• removing the second and the first hard mask layers;
• and
• filling the first and second trench openings and the via opening with a metal material.