US 2008/0174015 A1 · REMOVAL OF ETCHING PROCESS RESIDUAL IN SEMICONDUCTOR FABRICATION

Abstract

A semiconductor structure and methods for forming the same. A semiconductor fabrication method includes steps of providing a structure. A structure includes (a) a dielectric layer, (b) a first electrically conductive region buried in the dielectric layer, wherein the first electrically conductive region comprises a first electrically conductive material, and (c) a second electrically conductive region buried in the dielectric layer, wherein the second electrically conductive region comprises a second electrically conductive material being different from the first electrically conductive material. The method further includes the steps of creating a first hole and a second hole in the dielectric layer resulting in the first and second electrically conductive regions being exposed to a surrounding ambient through the first and second holes, respectively. Then, the method further includes the steps of introducing a basic solvent to bottom walls and side walls of the first and second holes.

Claims21

Dependent claims

A structure formation method, comprising:

providing a structure which includes:
(a) a dielectric layer,
(b) a first electrically conductive region buried in the dielectric layer, wherein the first electrically conductive region comprises a first electrically conductive material, and
(c) a second electrically conductive region buried in the dielectric layer, wherein the second electrically conductive region comprises a second electrically conductive material being different from the first electrically conductive material;
creating a first hole and a second hole simultaneously in the dielectric layer resulting in the first and second electrically conductive regions being exposed to a surrounding ambient through the first and second holes, respectively;
and
introducing a basic solvent to bottom walls and side walls of the first and second holes resulting in a removal of polymer residues on the bottom walls and side walls of the first and second holes.

4 more elements

A structure formation method, comprising:

providing a structure which includes:
(a) a dielectric layer,
(b) a first electrically conductive region buried in the dielectric layer, wherein the first electrically conductive region comprises copper, and
(c) a second electrically conductive region buried in the dielectric layer, wherein the second electrically conductive region comprises copper and aluminum;
then
creating a first hole and a second hole simultaneously in the dielectric layer resulting in the first and second electrically conductive regions being simultaneously exposed to a surrounding ambient through the first and second holes, respectively;
and then
introducing a basic solvent to bottom walls and side walls of the first and second holes resulting in a removal of polymer residues on the bottom walls and side walls of the first and second holes, wherein the basic solvent comprises tetramethyl ammonium hydroxide (TMAH).

5 more elements

Dependencies are inferred from the claim text.

Removal of etching process residual in semiconductor fabrication

Life of this patent

Removal of etching process residual in semiconductor fabrication

Life of this patent

Abstract

Claims21