Semiconductor device and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorTae Woo Kim
Life of this patent
Estimating the term…
Abstract
Embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device that may be capable of improving a step coverage of main chip and scribe lane regions during a formation of an interlayer dielectric are provided. In embodiments, the semiconductor device may include metal layers formed on a substrate including a main chip region and a scribe lane region, respectively, an interlayer dielectric formed on the substrate including the metal layers, a step coverage improving layer formed on an interlayer dielectric of the scribe lane region, a via hole inside the step coverage improving layer and the interlayer dielectric, and a via plug formed by filling the via hole with a metal.
Claims12
1-20. (canceled)
A semiconductor device comprising:
- an interlayer dielectric formed over a substrate including a main chip region and a scribe lane region;
- and
- a step coverage improving layer formed over the interlayer dielectric within only the scribe lane region.
A semiconductor device, comprising:
- first and second metal layers formed on a substrate over a main chip region and a scribe lane region, respectively;
- an inter layer dielectric formed on the substrate including the metal layers;
- and
- a step coverage improving layer formed on the inter layer dielectric of the scribe lane region, wherein the step coverage improving layer being at a height of the interlayer dielectric over the main chip region.
Dependencies are inferred from the claim text.