US 2008/0173981 A1 · INTEGRATED CIRCUIT (IC) CHIP WITH ONE OR MORE VERTICAL PLATE CAPACITORS AND METHOD OF MAKING THE CAPACITORS

Abstract

An Integrated Circuit (IC) chip with one or more vertical plate capacitors, each vertical plate capacitor connected to circuits on the IC chip and a method of making the chip capacitors. The vertical plate capacitors are formed with base plate pattern (e.g., damascene copper) on a circuit layer and at least one upper plate layer (e.g., dual damascene copper) above, connected to and substantially identical with the base plate pattern. A vertical pair of capacitor plates are formed by the plate layer and base plate. Capacitor dielectric between the vertical pair of capacitor plates is, at least in part, a high-k dielectric.

Claims20

Dependent claims

A method of forming Integrated Circuit (IC) chips, said method comprising the steps of:

a) defining at least one capacitor location above one or more circuits on a semiconductor substrate;
b) defining a plate pattern in each defined capacitor location;
c) forming a base plate in said defined plate pattern;
and
d) forming one or more upper plate layers above said base plate, a vertical pair of capacitor plates being formed by said base plate and said one or more plate layers, at least a portion of capacitor dielectric between said vertical pair being a high-k dielectric.

2 more elements

Dependencies are inferred from the claim text.

Integrated circuit (ic) chip with one or more vertical plate capacitors and method of making the capacitors

Life of this patent

Integrated circuit (ic) chip with one or more vertical plate capacitors and method of making the capacitors

Life of this patent

Abstract

Claims20