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AssigneeKoninklijke Philips Eletronics N.V.
InventorsWibo D. Van Noort, Petrus H.C. Magnee, Lis K. Nanver, Celine J. Detcheverry, Ramon J. Havens
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The invention relates to a semiconductor device (10) comprising a semiconductor body (1) with a high-ohmic semi-conductor substrate (2) which is covered with a dielectric layer (3, 4) containing charges, on which dielectric layer one or more passive electronic components (20) comprising conductor tracks (20) are provided, wherein, at the location of the passive elements (20), a region (5) is present at the interface between the semiconductor substrate (2) and the dielectric layer (3, 4), as a result of which the conductivity of an electrically conducting channel induced in the device (10) by the charges is limited at the location of the region (5). According to the invention, the region (5) is formed by deposition and comprises a semi-insulating material. As a result, the device (10) has a very low high-frequency power loss because the inversion channel is formed in the semi-insulating region (5). The device (10) further allows for a higher temperature budget and hence for the integration of active semiconductor elements (8) into the semiconductor body (1). A very suitable semi-insulating material for the region (5) is SiC, SIPOS or POLYDOX.
A semiconductor device comprising a high-ohmic semiconductor substrate which is covered with a dielectric layer which contains charges, on which dielectric layer one or more passive electronic elements including conductor tracks are situated, wherein, at the location of the passive elements a region is situated at the interface between the semiconductor substrate and the dielectric layers, causing the electrical conductivity of an electroconductive channel induced in the semiconductor device by the charges to be decreased at the location of the region characterized in that the region is formed by deposition and comprises a semi-insulating material.
A semiconductor device as claimed in any one of the preceding claims, characterized in that the semiconductor body comprises a semiconductor region with one or more semiconductor elements integrated therein.
A method of manufacturing a semiconductor device
Dependencies are inferred from the claim text.