Semiconductor Device with Pre-Anneal Sandwich Gate Structure, and Method of Manufacturing
AssigneeInfineon Technologies North America Corp.
InventorsHaoren Zhuang, Matthias Lipinski, Jingyu Lian, Chandrasekhar Sarma
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Abstract
Various illustrative embodiments of methods for manufacturing a semiconductor device are described. These methods may include, for example, forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion, and forming a second polysilicon layer over a surface of the first polysilicon layer. Also, various illustrative embodiments of semiconductor devices are described that may be manufactured such as by the various methods described herein.
Claims21
A method for manufacturing a semiconductor device, comprising:
- forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion;
- and
- forming a second polysilicon layer over a surface of the first polysilicon layer.
A method for manufacturing a semiconductor device, comprising:
- forming a polysilicon layer that comprises a first portion that is above a substrate, a second portion that is above the first portion and a third portion that is above the second portion by doping the second portion before the third portion is formed over the second portion;
- etching the third portion of the polysilicon layer using a first etchant, thereby exposing the second portion of the polysilicon layer;
- etching the exposed second portion of the polysilicon layer using a second etchant that is different from the first etchant, thereby exposing the first portion of the polysilicon layer;
- and
- etching the exposed first portion of the polysilicon layer using a third etchant that is different from the second etchant.
A method for manufacturing a semiconductor device, comprising:
- providing a semiconductor wafer having a silicon dioxide layer formed thereon;
- forming a first polysilicon layer over the silicon dioxide layer;
- implanting n-type ions into a first region of the first polysilicon layer;
- implanting p-type ions into a second region of the first polysilicon layer;
- forming a second polysilicon layer directly over the first region of the polysilicon layer;
- forming a photo-resist layer over the second polysilicon layer;
- removing a portion of the photo-resist layer to expose a portion of the second polysilicon layer;
- etching the exposed portion of the second polysilicon layer to expose the first region of the first polysilicon layer;
- and
- etching the first region of the first polysilicon layer to define a gate for an n-type field effect transistor.
A semiconductor device, comprising:
- a work piece;
- an insulating layer disposed above the work piece;
- and
- a polysilicon layer that is disposed over the insulating layer, wherein the polysilicon layer has a first end nearest the insulating layer and an opposing second end furthest from the insulating layer, wherein the polysilicon layer is doped so that a doping profile of the polysilicon layer along an axis normal to the insulating layer has a greatest density at a location other than the second end of the polysilicon layer.
Dependencies are inferred from the claim text.