Structure and Method of Fabricating Electrical Structure Having Improved Charge Mobility

Abstract

A method of fabricating an electrical structure with increased charge carrier mobility is provided. The method includes forming an N-type field effect transistor (nFET) device and a P-type field effect transistors (pFET) device on a semiconductor substrate; forming a compressive stress film over said nFET device for exerting tensile stress in a first channel associated with said nFET device; and forming a tensile stress film over said pFET device for exerting compressive stress in a second channel associated with said pFET. The method further includes forming at least one shallow region between a first gate associated with said nFET and a second gate associated with said pFET for generating conductive stresses in said first and second channels.

Dependencies are inferred from the claim text.