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US 2008/0173913 A1Published application
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorKenji KOJIMA
Life of this patent
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Abstract
In one aspect of the present invention, a semiconductor device may include a support member, a FinFET provided on the support member, which has a first fin, a source region provided in the first fin, a drain region provided in the first fin, and a gate electrode provided on the first fin via an gate insulating layer, and a capacitor provided on the support member, which has a second fin, a third fin and a dielectric layer provided between the second fin and the third fin.
Claims16
A semiconductor device, comprising:
- a support member;
- a FinFET provided on the support member, which has a first fin, a source region provided in the first fin, a drain region provided in the first fin, and a gate electrode provided on the first fin via an gate insulating layer;
- and
- a capacitor provided on the support member, which has a second fin, a third fin and a dielectric layer provided between the second fin and the third fin.
1 more element
Dependencies are inferred from the claim text.