Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorTomoki Inoue
Life of this patent
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Abstract
A semiconductor substrate has a second conductivity type cathode layer formed thereon. The cathode layer has a first conductivity type base layer formed thereon. A first anode region of the second conductivity type is formed in the surface of the base layer. A second anode region of the first conductivity type is formed in the first anode region. A first semiconductor region of the first conductivity type is formed in contact with the semiconductor substrate. A second semiconductor region of the second conductivity type is formed adjacent to the first semiconductor region and in contact with the cathode layer. An intermediate electrode is formed on the surfaces of the first semiconductor region and the contact region.
Claims20
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type and a cathode layer of a second conductivity type formed on the semiconductor substrate;
- a base layer of the first conductivity type formed on the cathode layer;
- a first anode region of the second conductivity type formed in a surface of the base layer;
- a second anode region of the first conductivity type formed in the first anode region;
- a first semiconductor region of the first conductivity type formed on the surface of the base layer and in contact with the semiconductor substrate, said first semiconductor region being apart from the first anode region;
- a second semiconductor region of the second conductivity type formed adjacent to the first semiconductor region and in contact with the cathode layer, said second semiconductor region being apart from the first anode region;
- a contact region of the second conductivity type formed in a surface including a boundary portion between the first semiconductor region and the second semiconductor region;
- a cathode electrode formed on a surface of the semiconductor substrate;
- an anode electrode formed on surfaces of the first anode region and the second anode region;
- and
- an intermediate electrode formed on surfaces of the first semiconductor region and the contact region.
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type and a cathode layer of a second conductivity type formed on the semiconductor substrate;
- a base layer of the first conductivity type formed on the cathode layer;
- a first anode region of the second conductivity type formed in a surface of the base layer;
- a second anode region of the first conductivity type formed in the first anode region;
- a first semiconductor region of the first conductivity type formed on the surface of the base layer and in contact with the semiconductor substrate, said first semiconductor region being apart from the first anode region;
- a second semiconductor region of the second conductivity type formed adjacent to the first semiconductor region and in contact with the cathode layer, said second semiconductor region being apart from the first anode region;
- a cathode electrode formed on a surface of the semiconductor substrate;
- an anode electrode formed on surfaces of the first anode region and the second anode region;
- and
- an intermediate electrode formed on surfaces of the first semiconductor region.
Dependencies are inferred from the claim text.