Heterojunction bipolar transistor having (In) (Al) GaAsSb/InGaAs base-collector structure
AssigneeNational Central University
InventorsSheng-Yu Wang, Jen-Inn Chyi, Shu-Han Chen
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Abstract
A hetero junction bipolar transistor (HBT) has a (In)(Al)GaAsSb/InGaAs base-collector structure. A discontinuous base-collector conduction band forms a built-in electric field to infuse electrons into a collector structure effectively, while a discontinuous base-collector valence band prevents holes from spreading into the collector structure at the same time. Thus, a current density is increased. In addition, the small offset voltage of the base-emitter and base-collector junctions reduce a power consumption.
Claims15
A heterojunction bipolar transistor (HBT) having an (In)(Al)GaAsSb/InGaAs base-collector structure, comprising:
- a substrate;
- a sub-collector contact layer;
- a collector structure;
- a base structure;
- an emitter structure;
- and
- an emitter contact layer,
- wherein said base structure is made of (In)(Al)GaAsSb.
Dependencies are inferred from the claim text.