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US 2008/0173326 A1Published application
Oxygen plasma clean to remove carbon species deposited on a glass dome surface
AssigneeApplied Materials, Inc.
InventorsQUANCHENG GU, Cheng-Hsiung Tsai, John C. Forster, Xiaoxi Guo, Larry Frazier
Life of this patent
Estimating the term…
Abstract
A method for in-situ cleaning of a dielectric dome surface having been used in pre-clean processes is provided. Carbon containing deposits are removed by providing a plasma of one or more oxidizing gases which react with the carbon containing films to form volatile carbon containing compounds.
Claims22
A method of cleaning a process chamber, comprising:
- providing a process chamber having carbon deposits on inner surfaces of a dielectric dome;
- introducing a first gas comprising one or more oxidizing gases into the process chamber at a flow rate of between about 0.32 sccm/cm2 and about 1.9 sccm/cm2 while maintaining a first pressure in the process chamber of between about 2 mTorr and about 25 mTorr;
- providing a first RF power at a frequency of between about 5 MHz and about 20 MHz to a substrate support member disposed in the process chamber and providing a second RF power at a frequency of between about 400 KHz and about 10 MHz to inductive coils surrounding the dielectric dome while maintaining a plasma of the first gas to react the one or more oxidizing gases with the carbon deposits to produce volatile compounds comprising carbon;
- terminating the first RF power, second RF power, and the first gas;
- introducing a second gas comprising one or more reducing gases to the process chamber at a flow rate of between about 0.16 sccm/cm2 and about 1.3 sccm/cm2, while maintaining a second pressure in the process chamber of between about 5 mTorr and about 60 mTorr;
- providing the first RF power at a frequency of between about 5 MHz and about 20 MHz to the substrate support member and providing the second RF power at a frequency of between about 400 KHz and about 10 MHz to the inductive coils while maintaining a plasma of the second gas to react the one or more reducing gases with the one or more oxidizing gases not evacuated from the process chamber;
- evacuating the chamber;
- and
- terminating the first RF power, the second RF power, and the second gas.
6 more elements
A method of cleaning a process chamber, comprising:
- providing a process chamber having carbon deposits on inner surfaces of a dielectric dome;
- introducing a first gas comprising oxygen into the process chamber at a flow rate of between about 0.32 sccm/cm2 and about 1.9 sccm/cm2 while maintaining a first pressure in the process chamber of between about 2 mTorr and about 25 mTorr;
- providing a first RF power at a of about 13.6 MHz to a substrate support member disposed in the process chamber and providing a second RF power at a frequency of about 2 MHz to inductive coils surrounding the dielectric dome while maintaining a plasma of the first gas to react the one or more oxidizing gases with the carbon deposits to produce volatile compounds comprising carbon;
- terminating the first RF power, second RF power, and the first gas;
- introducing a second gas comprising helium to the process chamber at a flow rate of between about 0.16 sccm/cm2 and about 1.3 sccm/cm2, while maintaining a second pressure in the process chamber of between about 5 mTorr and about 60 mTorr;
- providing the first RF power at a frequency of about 13.6 MHz to the substrate support member and providing the second RF power at a frequency of about 2 MHz to the inductive coils while maintaining a plasma of the second gas to react the one or more reducing gases with the one or more oxidizing gases not evacuated from the process chamber;
- evacuating the chamber;
- and
- terminating the first RF power, the second RF power, and the second gas.
6 more elements
A method of cleaning a process chamber, comprising:
- providing a process chamber having carbon deposits on inner surfaces of a dielectric dome;
- introducing a first gas comprising oxygen into the process chamber at a flow rate of between about 0.32 sccm/cm2 and about 1.9 sccm/cm2 while maintaining a first pressure in the process chamber of between about 2 mTorr and about 25 mTorr;
- providing a first RF power at a of about 13.6 MHz to a substrate support member disposed in the process chamber and providing a second RF power at a frequency of about 2 MHz to inductive coils surrounding the dielectric dome while maintaining a plasma of the first gas to react the one or more oxidizing gases with the carbon deposits for between about 1 minute and about 10 minutes to produce volatile compounds comprising carbon;
- terminating the first RF power, second RF power, and the first gas;
- introducing a second gas comprising helium to the process chamber at a flow rate of between about 0.16 sccm/cm2 and about 1.3 sccm/cm2, while maintaining a second pressure in the process chamber of between about 5 mTorr and about 60 mTorr;
- providing the first RF power at a frequency of about 13.6 MHz to the substrate support member and providing the second RF power at a frequency of about 2 MHz to the inductive coils while maintaining a plasma of the second gas to react the one or more reducing gases with the one or more oxidizing gases not evacuated from the process chamber for between about 1 minute and about 10 minutes;
- evacuating the chamber;
- and
- terminating the first RF power, the second RF power, and the second gas.
6 more elements
Dependencies are inferred from the claim text.