Methods and systems for determining pitch of lithographic features
AssigneeTexas Instruments Incorporated
InventorSean C. O'BRIEN
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Abstract
A method is provided for determining pitch of lithographic features of a mask. The method includes determining a bias based on an interaction between a plurality of reference features positioned according to a lithographic parameter of the mask, applying the bias to a plurality of lithographic features of the mask, and determining pitch of the plurality of lithographic features based on interactions between the biased plurality of lithographic features of the mask.
Claims20
A method of determining pitch of lithographic features of a mask, comprising:
- determining a bias based on an interaction between a plurality of reference features positioned according to a lithographic parameter of the mask;
- applying the bias to a plurality of lithographic features of the mask;
- and
- determining pitch of the plurality of lithographic features based on interactions between the biased plurality of lithographic features of the mask.
A method of preventing photolithographic mask problem sites, the method comprising:
- generating a plurality of reference auxiliary features for a plurality of random contacts;
- determining a minimum separation distance between the plurality of random contacts based on lithographic parameters;
- determining a bias of the plurality of random contacts, separated by the minimum separation distance, by enlarging the area of the plurality of random contacts until the plurality of random contacts have a projection;
- applying the bias to a plurality of contacts of a mask;
- determining an interaction of the biased plurality of contacts by determining portions of an edge of one of the plurality of biased contact that interacts with projections of adjacent biased plurality of contacts;
- and
- determining pitch of the plurality of biased contacts based on interaction of edges of the plurality of biased contacts.
A system for determining pitch of lithographic features of a mask, the system comprising:
- a processor;
- and
- an application configured for execution by the processor comprising program instructions for determining a bias based on an interaction between a plurality of reference features positioned according to a lithographic parameter of the mask, applying the bias to a plurality of lithographic features of the mask, and determining pitch of the plurality of lithographic features based on interactions of the biased lithographic features of the mask.
Dependencies are inferred from the claim text.