Low temperature oxide formation
OwnerJeong Soo Byun, Krishnaswamy Ramkumarinventors
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Abstract
A method of forming a semiconductor structure includes oxidizing a gate stack at a temperature of at most 600° C. with a plasma prepared from a gas mixture. The gas mixture includes an oxygen-containing gas and ammonia, and the gate stack is on a semiconductor substrate. The gate stack contains a gate layer, a conductive layer on the gate layer, a metal layer on the conductive layer, and a capping layer on the metal layer.
Claims20
A method of forming a semiconductor structure, comprising:
- oxidizing a gate stack at a temperature of at most 600° C. with a plasma prepared from a gas mixture;
- wherein the gas mixture comprises an oxygen-containing gas and ammonia,
- the gate stack is on a semiconductor substrate, and
- the gate stack comprises:
- a gate layer,
- a conductive layer, on the gate layer,
- a metal layer, on the conductive layer, and
- a capping layer, on the metal layer.
A method of oxidizing silicon, comprising:
- oxidizing the silicon at a temperature of at most 600° C. with a plasma prepared from a gas mixture;
- wherein the gas mixture comprises an oxygen-containing gas and ammonia.
In a method of forming sidewall oxide on a gate stack by oxidizing with steam, the improvement comprising replacing the steam with a plasma prepared from a gas mixture including an oxygen-containing gas and ammonia, prepared with high frequency and low frequency RF radiation.
Dependencies are inferred from the claim text.