Eda methodology for extending ghost feature beyond notched active to improve adjacent gate cd control using a two-print-two-etch approach
AssigneeTexas Instruments Incorporated
InventorsBenjamen Michael Rathsack, James Walter Blatchford
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Abstract
In accordance with various embodiments, semiconductor devices and methods of forming semiconductor devices having non-rectangular active regions are provided. An exemplary method includes using a first mask to form a plurality of first features over a non-rectangular shaped active region and at least one ghost feature, wherein the plurality of first features extend beyond an edge of the non-rectangular shaped active region. The method further includes using a second mask to remove a portion of the plurality of first features extending beyond the edge of the non-rectangular shaped active region and the at least one ghost feature.
Claims13
A method of forming a semiconductor device comprising:
- using a first mask to form a plurality of first features over a non-rectangular shaped active region and at least one ghost feature, wherein the plurality of first features extend beyond an edge of the non-rectangular shaped active region;
- and
- using a second mask to remove a portion of the plurality of first features extending beyond the edge of the non-rectangular shaped active region and the at least one ghost feature.
A lithography mask set comprising:
- a first mask comprising first mask features that pattern features over an non-rectangular shaped active area, wherein the features extend beyond the edge of the L-shaped active area;
- and
- a second mask comprising a second mask feature to trim a portion of the features extending beyond the edge of the non-rectangular shaped active area.
A computer readable medium comprising program code that configures a processor to perform a method of designing a lithography mask set, the computer readable medium comprising:
- program code for forming a first mask, the first mask comprising first mask features that pattern a plurality of lines over an non-rectangular shaped active region, wherein the plurality of lines extend beyond an edge of the non-rectangular shaped active region;
- and
- program code for forming a second mask, the second mask comprising second mask features for removing a portion of the plurality of lines extending beyond the edge of the non-rectangular shaped active region.
Dependencies are inferred from the claim text.