Methods of manufacturing semiconductor structures using rie process

A method for homogenously removing metallic or dielectric films on a silicon wafer by a reactive ion etching, comprising:

• reducing a pressure inside the etch chamber subsequent to an etching of an upper layer of the silicon wafer;
• introducing a gas mixture comprising an etch gas having a first flow rate and a supplemental gas having a second flow rate for etching a layer above a bonding layer of the silicon wafer;
• adjusting flow rate of at least one of the etch gas and the supplemental gas compared to the etching of the upper layer of the silicon wafer by applying a source radio frequency power;
• and
• applying a bias radio frequency of about 5 to 30 MHz and bias radio frequency power.

A method for reducing foreign material buildup in etch chambers during reactive ion etching comprising:

• etching metallic films or dielectric films in a dilute etch gas atmosphere, wherein the etch gas is diluted with at least one gas selected from the group consisting of helium, neon, argon, oxygen, and nitrogen, at a flow rate ratio of etch gas to dilution gas between about 0.010 and 0.100 and at a pressure between about 30 and 50 millitorr;
• and
• applying a source radio frequency between 250 and 750 watts and a bias radio frequency of about 5 to 30 MHz and with a power of between 1000 and 3000 Watts,
• wherein the metallic films or dielectric films comprises silicon oxides, silicon nitrides, and titanium nitrides.