Formation of vertical devices by electroplating
AssigneeInternational Business Machines Corporation
InventorsHariklia Deligianni, Qiang Huang, John P. Hummel, Lubomyr T. Romankiw, Mary B. Rothwell
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AssigneeInternational Business Machines Corporation
InventorsHariklia Deligianni, Qiang Huang, John P. Hummel, Lubomyr T. Romankiw, Mary B. Rothwell
Estimating the term…
The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.
A method comprising:
A device structure comprising a substrate, a discrete metal contact pad located over a top surface of said substrate, an inter-level dielectric (ILD) layer covering both the substrate and the at least one metal contact pad, a metal via structure extending through the ILD layer onto the discrete metal contact pad, and a vertical conductive structure extending through the ILD layer onto the discrete metal contact pad.
Dependencies are inferred from the claim text.