Back to results
US 2008/0166865 A1Published application
Method of fabricating flash memory
AssigneePoongsan Microtec Co. Ltd. (Status: Corporation )
InventorsHyun-Sang Hwang, Ho-Kyung Park, Man Jang, Min-Seok Jo
Life of this patent
Estimating the term…
Abstract
A method of fabricating a flash memory is provided. The method includes forming a tunneling insulating film, a charge storage film, and a blocking insulating film on a semiconductor substrate; performing High Temperature (HT) anneal for the resultant semiconductor substrate; and performing Low Temperature (LT) wet vapor anneal for the resultant semiconductor substrate.
Claims7
A method of fabricating a flash memory, comprising:
- forming a tunneling insulating film on a semiconductor substrate;
- forming a charge storage film on the tunneling insulating film;
- forming a blocking insulating film on the charge storage film;
- performing High Temperature (HT) anneal for the semiconductor substrate comprising the blocking insulating film;
- and
- performing Low Temperature (LT) wet vapor anneal for the semiconductor substrate for which the HT anneal is performed,
- wherein the LT wet vapor anneal is performed under an atmosphere of 2 to 100 atmospheric pressure, cures oxygen defects of the blocking insulating film, and uses vapor to cure interfacial defects.
4 more elements
Dependencies are inferred from the claim text.