US 2008/0166861 A1Published application

Impurity introducing apparatus and impurity introducing method

AssigneeMatsushita Electric Industrial Co., Ltd.

InventorsBunji Mizuno, Ichiro Nakayama, Yuichiro Sasaki, Tomohiro Okumura, Cheng-Guo Jin, Hiroyuki Ito

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Abstract

It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

Claims8

Dependent claims

An impurity introducing apparatus for introducing plural kinds of impurities into a solid sample by using a plasma,

the apparatus comprising at least one of the following mechanisms or intending one of the following mechanisms as an apparatus group:
1 an impurity introducing mechanism which is independent every desirable impurity;
2 a solid sample delivering mechanism which is independent every desirable impurity;
3 a delivering mechanism for linking the impurity introducing mechanism and the solid sample delivering mechanism which are independent every desirable impurity;
4 a mechanism set exclusively every desirable impurity and serving to remove a resin to prevent an introduction of the impurity;
5 a sample delivering mechanism for linking a plurality of impurity introducing apparatuses which are independent every desirable impurity;
and
6 a mechanism for delivering a sample and a sample group between the impurity introducing apparatuses which are independent every desirable impurity and the apparatus for removing a resin.

5 more elements

An impurity introducing apparatus for introducing plural kinds of impurities into a solid sample by using a plasma, comprising at least one of the following mechanisms or intending one of the following mechanisms as an apparatus group,

wherein at least one of the following mechanisms is included or one of the following mechanisms is intended for the apparatus group in such a manner that nonpreferable impurities are not mixed with each other in the case in which desirable impurities required for causing the solid sample to retain electrical, mechanical or some specific functions do not damage the function even if they are mixed with each other during a treatment at an impurity introducing step in some combination and damage the mutual specific functions in the other combination:
1 an impurity introducing mechanism capable of simultaneously introducing impurities which do not damage the function even if they are mixed with each other;
2 a solid sample delivering mechanism which is exclusively independent for only the combination of the impurities which do not damage the function even if they are mixed with each other;
3 a solid sample delivering mechanism for exclusively and independently delivering only a solid sample into which impurities which do not damage the function even if they are mixed with each other are to be introduced or the impurities are introduced;
4 a mechanism set exclusively every combination of the impurities which do not damage the function even if they are mixed with each other and serving to remove a resin to prevent a mixture with nonpreferable impurities;
5 a sample delivering mechanism for linking a plurality of impurity introducing apparatuses set exclusively every combination of the impurities which do not damage the function even if they are mixed with each other;
and
6 a mechanism for delivering a sample and a sample group between the impurity introducing apparatuses set exclusively every combination of the impurities which do not damage the function even if they are mixed with each other and an apparatus for removing a resin.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/057,117Filed 27 Mar 2008
Priority: JP 2005-09915030 Mar 2005
Published: 10 Jul 2008
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10P 72/0454
Characterised by the layout of the process chambers: surrounding a central transfer chamber
H01J 37/32412
Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources: plasma immersion ion…
H10P 32/1204
Between a solid phase and a gaseous phase: from a plasma phase
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered

Family

Application11/887,371Continuation
Application12/057,117Continuation
US 2009/0140174 A1Published application
US 7,626,184 B2Related patent
US 2008/0166861 A1This patent

From the US filing history. Foreign family members aren’t listed.