Method for manufacturing a semiconductor device
AssigneeSpansion LLC
InventorsFumihiko INOUE, Yukio HAYAKAWA
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Abstract
A method of manufacturing a semiconductor device includes forming a silicon nitride film having an opening portion on a semiconductor substrate, forming a silicon oxide film on the silicon nitride film and on a side face of the opening portion, performing an etching treatment to the silicon oxide film so that a sidewall is formed on the side face of the opening portion, forming a trench on the semiconductor substrate with use of the sidewall and the silicon nitride film as a mask, and forming an insulating layer in the trench. The step of forming the silicon oxide film includes oxidizing the silicon nitride film with a plasma oxidation method or a radical oxidation method.
Claims10
A method for manufacturing a semiconductor device comprising:
- forming a silicon nitride film on a semiconductor substrate, the silicon nitride film having an opening formed in a portion thereof;
- forming a silicon oxide film on the silicon nitride film and on a side face of the opening;
- etching the silicon oxide film so that a sidewall is formed on the side face of the opening;
- forming a trench in the semiconductor substrate using the sidewall and the silicon nitride film as a mask;
- and
- forming an insulating layer in the trench,
- wherein the step of forming the silicon oxide film includes the step of oxidizing the silicon nitride film with one of a plasma oxidation method or a radical oxidation method.
A method for manufacturing a semiconductor device comprising:
- forming a silicon nitride film and a first silicon oxide film on a semiconductor substrate, the silicon nitride film and the first silicon oxide film having an opening formed in a portion thereof;
- forming a second silicon oxide film on an upper face of the first silicon oxide film and on a side face of the opening;
- etching the second silicon oxide film so that the first silicon oxide film on the silicon nitride film is left and forming a sidewall on the side face of the opening;
- forming a trench in the semiconductor substrate using the sidewall and the silicon nitride film as a mask;
- and
- forming an insulating layer in the trench.
Dependencies are inferred from the claim text.