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US 2008/0166664 A1Published application
Method for forming a resist pattern using a shrinking technology
AssigneeElpida Memory, Inc.
InventorYoichi NOMURA
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Abstract
A method of forming a resist pattern includes the steps of: forming a photoresist pattern on a wafer by exposure and development of a photoresist film; treating the surface of the photoresist pattern by using a resist solvent; and thermally flowing the treated photoresist pattern for shrinkage. An isotropic shrinkage amount is obtained for the hole pattern including a dense portion and an isolated portion of the holes.
Claims9
A method comprising:
- forming a photoresist pattern on a wafer by exposure and development of a photoresist film;
- treating a surface of said photoresist pattern by using a resist solvent;
- and
- thermally flowing said treated photoresist pattern for shrinkage thereof.
1 more element
Dependencies are inferred from the claim text.