Metal catalyzed selective deposition of materials including germanium and antimony
AssigneeInternational Business Machines Corporation
InventorsSupratik Guha, Fenton R. McFeely, John J. Yurkas
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Abstract
A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material.
Claims31
A method of selectively depositing a material comprising germanium and antimony comprising:
- positioning a substrate in a chemical vapor deposition reactor chamber, said substrate including a region that contains a metal that is capable of forming an eutectic alloy with germanium;
- evacuating said reactor chamber including said substrate to a base pressure of less than 1E-3 torr;
- heating the substrate to a temperature that is less than 400° C.;
- providing an antimony-containing precursor and a germanium-containing precursor to said reactor chamber;
- and
- depositing a material comprising germanium (Ge) and antimony (Sb) onto said region of the substrate that contains said metal from said precursors.
A method of selectively depositing comprising germanium (Ge) and antimony (Sb) comprising:
- positioning a substrate in a chemical vapor deposition reactor chamber;
- evacuating said reactor chamber including said substrate to a base pressure of less than 1E-3 torr;
- heating the substrate to a temperature that is less than 400° C.;
- forming a metal that is capable of forming an eutectic alloy with germanium on a region of said substrate;
- providing an antimony-containing precursor and a germanium-containing precursor to said reactor chamber;
- and
- depositing a material comprising germanium (Ge) and antimony (Sb) onto said region of the substrate that contains said metal from said precursors.
A method of selectively depositing a material comprising germanium (Sb) and antimony (Sb) comprising:
- positioning an insulating material in a chemical vapor deposition reactor chamber, said insulating material including a region that contains Au;
- evacuating said reactor chamber including said interconnect structure to a base pressure of less than 1E-3 torr;
- heating the interconnect structure to a temperature that is less than 400° C.;
- providing an antimony-containing precursor and a germanium-containing precursor to said reactor chamber;
- and
- depositing a material comprising germanium (Ge) and antimony (Sb) on said regions of said insulating material containing Au from said precursors.
A semiconductor structure comprising:
- a substrate including a region that contains a metal;
- and
- a material comprises Ge and Sb on said metal, wherein said material includes a surface layer of said metal that has a thickness of less than 5 monolayers.
Dependencies are inferred from the claim text.