Back to results
US 2008/0165458 A1Published application
Electrostatic protection device
OwnerThomas R. Apel, Jeremy R. Middletoninventors
Life of this patent
Estimating the term…
Abstract
One embodiment of an electrostatic protection diode in an integrated circuit includes a base area having at least two bends therein.
Claims34
An electrostatic protection device, comprising:
- a collector contact including first, second and third sides;
- and
- a base area that surrounds said collector contact on at least a portion of each of said first, second and third sides.
A microchip power amplifier electrostatic protection device, comprising:
- a collector contact;
- and
- a base area that defines a U shape positioned at least partially around said collector contact.
An electrostatic protection diode, comprising:
- a base area having a perimeter dimension and a surface area dimension,
- wherein a ratio of said perimeter in micrometers to a surface area in micrometers squared defines a ratio of at least 0.4 μm−1.
An electrostatic protection diode, comprising:
- a base area that defines a surface area;
- and
- an isolation region that defines a surface area,
- wherein said isolation region surface area is at most double the size of said base area surface area.
1 more element
An electrostatic protection structure in an integrated circuit, comprising:
- means for regulating a current flow;
- and
- means for collecting a current flow,
- wherein said means for regulating at least partially surrounds said means for collecting.
1 more element
A method of manufacturing an electrostatic protection device, comprising:
- depositing a collector contact;
- and
- defining a base area that at least partially surrounds said collector contact.
An electrostatic protection diode in an integrated circuit comprising a base area having at least two bends therein.
Dependencies are inferred from the claim text.