Self-aligned, sub-wavelength optical lithography
AssigneeHewlett-Packard Development Company, L.P.
InventorsDavid Fattal, Jason Blackstock
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Abstract
Embodiments of the invention provide a method and an apparatus for performing self-aligned, sub-wavelength optical lithography. One embodiment provides a region of photoresist above a conductive surface having a plurality of periodically arrayed openings extending therethrough. At least a portion of the region of photoresist is then exposed to a light, wherein the intensity of the light is less than the intensity required to cure the photoresist. In so doing, at least one self-aligned, sub-wavelength location in at least one location of the region of photoresist is cured.
Claims20
A method for performing self-aligned, sub-wavelength optical lithography, said method comprising:
- providing a region of photoresist above a conductive layer having a plurality of periodically arrayed openings extending therethrough;
- exposing at least a portion of said region of photoresist to a light, wherein the intensity of said light is less than the intensity required to cure said photoresist;
- and
- curing at least one self-aligned, sub-wavelength location in at least one location of said region of photoresist.
A self-aligning sub-wavelength system for optical lithography comprising:
- a lithographic object comprising:
- a conductive surface coupled with a semiconductor layer, said conductive surface having a plurality of periodically arrayed openings extending therethrough;
- and
- a region of photoresist coupled to said conductive surface;
- and
- a light source having an intensity that is less than the intensity required to cure said photoresist, wherein said light source is configured to interact with said lithographic object to cure at least one self-aligned, sub-wavelength location in at least one location of said region of photoresist.
A method for performing self-aligned, sub-wavelength optical lithography, said method comprising:
- coupling a metal surface to a first surface of a semiconductor material, said metal surface comprising a plurality of periodically arrayed openings extending therethrough;
- providing a region of photoresist above said metal surface;
- exposing at least a portion of said region of photoresist to a light, wherein the intensity of said light is less than the intensity required to cure said photoresist;
- and
- curing at least one self-aligned, sub-wavelength location in at least one location of said region of photoresist.
Dependencies are inferred from the claim text.