Semiconductor device
AssigneeRenesas Technology Corp.
InventorsKazushi Kono, Takeshi Iwamoto, Hisayuki Kato, Shigeki Obayashi, Toshiaki Yonezu
Life of this patent
Estimating the term…
Abstract
The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered. A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.
Claims9
A semiconductor device, comprising:
- a plurality of electric straight line-like fuses prolonged in parallel mutually;
- wherein
- each of the electric straight line-like fuses has a projecting portion;
- and
- the projecting portion group has been arranged in a shape of zigzag in a plan view.
A semiconductor device, comprising:
- a first electric fuse part which has one side end and other side end, the first electric fuse part formed in a shape of a straight line;
- a second electric fuse part which has one side end and other side end corresponding to the one side end and the other side end, and is prolonged in parallel with the first electric fuse part, the second electric fuse part formed in a shape of a straight line;
- a first projecting portion that projects from the first electric fuse part in a position which shifts from a middle position of the first electric fuse part to one side end side;
- and
- a second projecting portion that projects from the second electric fuse part in a position which shifts from a middle position of the second electric fuse part to other side end side.
A semiconductor device, comprising:
- a first fuse unit and a second fuse unit;
- wherein
- the first fuse unit includes:
- a first electric fuse part that has a first one side end and a first other side end, the first electric fuse part formed in a shape of a straight line;
- a first via part that has 1 or two or more vias which are connected to a position near the first one side end of the first electric fuse part;
- and
- a second via part that has bigger resistance than the first via part, and has 1 or two or more vias which are connected to a position near the first other side end of the first electric fuse part of a shape of a straight line;
- wherein
- the second fuse unit includes:
- a second electric fuse part that has a second one side end and a second other side end corresponding to the first one side end and the first other side end, and is prolonged in parallel to the first electrode fuse part of a shape of a straight line, the second electric fuse part formed in a shape of a straight line;
- a third via part that has 1 or two or more vias which are connected to a position near the second one side end of the second electric fuse part of a shape of a straight line;
- and
- a fourth via part that has resistance smaller than the third via part, and has 1 or two or more vias which are connected to a position near the second other side end of the second electric fuse part of a shape of a straight line;
- and wherein
- the first fuse unit and the second fuse unit are repeated by turns.
A semiconductor device, comprising:
- a first electric fuse part that has a first one side end and a first other side end, the first electric fuse part formed in a shape of a straight line;
- a first via part that has 1 or two or more vias which are connected to a position near the first one side end of the first electric fuse part;
- a second via part that has bigger resistance than the first via part, and has 1 or two or more vias which are connected to a position near the first other side end of the first electric fuse part of a shape of a straight line;
- a second electric fuse part that has a second one side end and a second other side end corresponding to the first one side end and the first other side end, and is prolonged in parallel to the first electric fuse part of a shape of a straight line, the second electric fuse part formed in a shape of a straight line;
- a third via part that has 1 or two or more vias which are connected to a position near the second one side end of the second electric fuse part of a shape of a straight line;
- and
- a fourth via part that has resistance smaller than the third via part, and has 1 or two or more vias which are connected to a position near the second other side end of the second electric fuse part of a shape of a straight line.
A semiconductor device, comprising:
- a plurality of upper wiring layers formed in the same layer;
- a plurality of lower-layer wiring layers which are formed in the same layer and formed below the upper wiring layer;
- and
- a plurality of electric fuse parts which have a plurality of vias, both sides of the upper wiring layer and the lower-layer wiring layer contacted with each one of the plurality of vias;
- wherein
- the electric fuse parts have been arranged in a shape of zigzag in a plan view.
Dependencies are inferred from the claim text.