US 2008/0164614 A1Published application

Semiconductor device

AssigneeKabushiki Kaisha Toshiba

InventorsSachiyo Ito, Masahiko Hasunuma

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Abstract

A semiconductor device including at least two layers of interlayer-insulator-films stacked above a substrate and at least partially formed by a low-relative-dielectric-constant-film having a relative-dielectric-constant of 3.4 or less respectively, a plurality of wirings provided at least one within each of the interlayer-insulator-film and at least partially located within the low-relative-dielectric-constant-films, a plurality of plugs provided at least one within each of the interlayer-insulator-film and connected to a lower part of the wirings, and a plurality of reinforcement members provided at least one within each of the interlayer-insulator-film with being separated from the wirings at a predetermined interval, electrically cut from the wirings and the plugs, and at least partially located within the low-relative-dielectric-constant-films, and wherein, the interlayer-insulator-films, the wirings, the plugs, and the reinforcement members satisfy a predetermined relation for each of the interlayer-insulator-film.

A semiconductor device comprising:

at least two layers of interlayer-insulator-films stacked above a substrate and at least partially formed by a low-relative-dielectric-constant-film having a relative-dielectric-constant of 3.4 or less respectively;
a plurality of wirings provided at least one within each of the interlayer-insulator-film and at least partially located within the low-relative-dielectric-constant-films;
a plurality of plugs provided at least one within each of the interlayer-insulator-film and connected to a lower part of the wirings;
and
a plurality of reinforcement members provided at least one within each of the interlayer-insulator-film with being separated from the wirings at a predetermined interval, electrically cut from the wirings and the plugs, and at least partially located within the low-relative-dielectric-constant-films;
and wherein,
for each of the reinforcement member, a value obtained by dividing an area of a part that is exposed on an upper face of each of the interlayer-insulator-film by an length of a part contacting each of the interlayer-insulator-film of the part that is exposed on the upper face of each of the interlayer-insulator-film is defined to be S;
a Young's modulus of a respective layer on which the plug is provided among the interlayer-insulator-films is defined to be EP;
a Young's modulus of a respective layer on which the wiring is provided among the interlayer-insulator-films is defined to be EW;
a Young's modulus of the wirings is defined to be EM;
a film thickness of a respective layer on which the plug is provided among the interlayer-insulator-films is defined to be dP;
a film thickness of a respective layer on which the wiring is provided among the interlayer-insulator-films are defined to be dW;
a coverage of the reinforcement member per unit area in an area in the interlayer-insulator-films where the reinforcement members are provided is defined to be R;
and
the S, the EP, the EW, the EM, the dP, the dW, and the R satisfy a relation shown in the following formula for each of the interlayer-insulator-film:
0.025
×
(
E
P
×
d
P
+
(
E
W
×
(
1
-
R
)
+
E
M
×
R
)
×
d
W
d
P
+
d
W
)
0.4
<
S
<
0.0625
×
(
E
P
×
d
P
+
(
E
W
×
(
1
-
R
)
+
E
M
×
R
)
×
d
W
d
P
+
d
W
)
0.4

83 more elements

Abstract

Claims20