ULTRA-THIN Cu ALLOY SEED FOR INTERCONNECT APPLICATION
AssigneeInternational Business Machines Corporation
InventorsDaniel C. Edelstein, Stephen M. Rossnagel
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Abstract
A copper interconnection structure which is electroplated onto a silicon layer or semiconductor substrate. The structure includes an ultra-thin copper seed alloy incorporating selectively minor amounts of a dopant material to facilitate a continuous deposition thereof onto the silicon layer or semiconductor substrate. The copper seed alloy may contain dopant material selected from the group of materials consisting of Ru, Ir, Pt, Pd and alloys thereof. Furthermore, there is provided a method for producing the structure.
Claims8
A copper interconnection structure which is electroplated onto a silicon layer or semiconductor substrate, wherein said structure comprises an ultra-thin copper seed alloy incorporating selectively minor amounts of a dopant material to facilitate a continuous deposition thereof onto the silicon layer or semiconductor substrate.
A method of producing a copper interconnection structure comprising electroplating a copper composition onto a silicon layer or semiconductor substrate, wherein said copper composition comprises an ultra-thin copper seed alloy incorporating selectively minor amounts of a dopant material to facilitate a continuous deposition thereof onto the silicon layer or semiconductor substrate.
Dependencies are inferred from the claim text.