Semiconductor device and method of manufacturing the same
AssigneeRohm Co., Ltd.
InventorsRyotaro Yagi, Yuichi Nakao, Isamu Nishimura
Life of this patent
Estimating the term…
Abstract
The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.
Claims4
A semiconductor device comprising:
- a lower electrode made of a metallic material;
- a capacitance film made of an insulating material and laminated on the lower electrode;
- an upper electrode made of a metallic material, opposed to the lower electrode with the capacitance film sandwiched therebetween, and having an outline smaller than that of the lower electrode in plan view along the opposed direction;
- and
- a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.
A semiconductor device comprising:
- a lower electrode made of a metallic material;
- a capacitance film made of an insulating material and laminated on the lower electrode;
- an upper electrode made of a metallic material, opposed to the lower electrode with the capacitance film sandwiched therebetween, and having an outline smaller than that of the lower electrode in plan view along the opposed direction;
- and
- a protective film made of an insulating material laminated on the upper electrode, and having the same outline as that of the upper electrode in plan view.
A method of manufacturing a semiconductor device, comprising:
- a capacitance film forming step of forming a capacitance film made of an insulating material, on a lower electrode made of a metallic material;
- an upper electrode forming step of forming an upper electrode made of a metallic material, having an outline smaller than that of the lower electrode in plan view along the opposed direction on a position of the capacitance film opposed to the lower electrode;
- a protective film forming step of forming a protective film made of an insulating material on the upper electrode;
- an insulating film forming step of forming an insulating film made of an insulating material on the capacitance film and the protective film;
- a through-hole forming step of forming through-holes partially exposing the capacitance film and the protective film respectively in the insulating film;
- and
- an etching step of etching the capacitance film and the protective film through the insulating film as a mask, thereby forming openings exposing the lower electrode and the upper electrode in the capacitance film and the protective film respectively after the through-hole forming step.
Dependencies are inferred from the claim text.