Planar Oxidation Method for Producing a Localised Buried Insulator
AssigneeCentre National de la Recherche Scientifique (CNRS)
InventorsGuilhem Almuneau, Antonio Munoz-Yague, Thierry Camps, Chantal Fontaine, Veronique Bardinal-Delagnes
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Abstract
The invention relates to a method of producing a semiconductor device, comprising the following steps consisting in: forming first, second and third semiconductor layers (1, 2, 3), whereby the first and second layers (1, 3) contain a smaller concentration of oxidisable species than the second layer (2); forming a mask (4) on the third layer (3); and oxidising the second layer (2) with the diffusion of oxidising species through the third layer (3).
Claims13
A process for the manufacture of a semiconductor comprising the steps of:
- (a) formation of a first semiconductor layer;
- (b) formation of a second semiconductor layer above the first semiconductor layer, according to a direction of formation Z, a concentration of species capable of being oxidised in the first layer being substantially weaker than a concentration of species capable of being oxidised in the second layer;
- (c) formation of a third semiconductor layer above the second semiconductor layer, in according to the direction of formation Z, a concentration of species capable of being oxidised in the third layer being substantially weaker than the concentration of species capable of being oxidised in the second layer;
- (d) formation of at least one diffusion zone on the third layer;
- (e1) diffusion of oxidising species in the material of the third layer according to a general direction of diffusion parallel to the direction of formation,
- (e2) oxidation of the second layer by diffusion of oxidising species through the third layer.
Dependencies are inferred from the claim text.