Nitride read-only memory cell and method of manufacturing the same
AssigneeMacronix International Co., Ltd.
InventorChi-Pin Lu
Life of this patent
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Abstract
A nitride read-only memory cell and a method of manufacturing the same are provided. First, a substrate is provided, and a first oxide layer is formed on the substrate. Next, a nitride layer is deposited on the first oxide layer via a first gas and a second gas. The flow ratio of the first gas to the second gas is 2:1. After that, a second oxide layer is formed on the nitride layer. Then, a bit-line region is formed at the substrate. Afterward, a gate is formed on the second oxide layer. The first oxide layer, nitride layer, the second oxide layer and the gate compose a stack structure of the cell. Further, a spacer is formed on the side-wall of the stack structure.
Claims24
A method of manufacturing a nitride read-only memory cell, comprising:
- providing a substrate;
- forming a first oxide layer on the substrate;
- depositing a nitride layer on the first oxide layer via a first gas and a second gas, wherein the flow ratio of the first gas to the second gas is 2:1;
- forming a second oxide layer on the nitride layer;
- forming a bit-line region at the substrate;
- forming a gate on the second oxide layer, wherein the first oxide layer, the nitride layer, the second oxide layer and the gate compose a stack structure of the cell;
- and
- forming a spacer on the side-wall of the stack structure.
A nitride read-only memory cell, comprising:
- a substrate having a bit-line region;
- a stack structure disposed on the substrate, wherein the bit-line region is positioned at the two sides of the stack structure, the stack structure at least comprises:
- a plurality of oxide layer;
- a nitride layer disposed between the oxide layers, wherein the nitride layer is formed by way of deposition via a first gas and a second gas, the flow ratio of the first gas to the second gas is 2:1;
- and
- a gate disposed on the top of the stack structure;
- and
- a spacer disposed on side-wall of the stack structure.
Dependencies are inferred from the claim text.