Bipolar transistor with silicided sub-collector
AssigneeInternational Business Machines Corporation
InventorsFrancois Pagette, Christian Lavoie, Anna Topol
Life of this patent
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Abstract
Embodiments of the invention provide a semiconductor device including a collector in an active region; a first and a second sub-collector, the first sub-collector being a heavily doped semiconductor material adjacent to the collector and the second sub-collector being a silicided sub-collector next to the first sub-collector; and a silicided reach-through in contact with the second sub-collector, wherein the first and second sub-collectors and the silicided reach-through provide a continuous conductive pathway for electrical charges collected by the collector from the active region. Embodiments of the invention also provide methods of fabricating the same.
Claims29
A semiconductor device, comprising:
- a collector in an active region;
- a first and a second sub-collector, said first sub-collector being a doped semiconductor adjacent to said collector and said second sub-collector being a silicided sub-collector next to said first sub-collector;
- and
- a silicided reach-through in contact with said second sub-collector,
- wherein said first and second sub-collectors provide an horizontal conductive pathway and said silicided reach-through provides a vertical conductive pathway continued from said horizontal conductive pathway for electrical charges collected by said collector from said active region.
A heterojunction bipolar transistor (HBT), comprising:
- an active region including an intrinsic base and a collector;
- a sub-collector region underneath said active region;
- and
- a silicided reach-through in contact with said sub-collector region,
- wherein said sub-collector region and said silicided reach-through provide a conductive pathway for electrical charges collected from said active region.
A method of fabricating a semiconductor device, comprising:
- defining a sub-collector region in a layer of doped semiconductor material;
- forming an active region, a dielectric region, and a reach-through region on top of said layer of semiconductor material, said dielectric region separating said active region from said reach-through region;
- and
- siliciding said reach-through region and a portion of said sub-collector region to from a partially silicided conductive pathway.
A semiconductor device, comprising:
- a collector;
- an emitter formed on top of said collector;
- an extrinsic base formed at least partially on top of said collector;
- a layer of dielectric material surrounding said collector, on which at least a portion of said extrinsic base is formed;
- and
- a silicided reach-through for contacting said collector extending from the surface of said layer of dielectric material, in an area away from said extrinsic base, to a level equal or below the bottom of said layer of dielectric material.
Dependencies are inferred from the claim text.